The first ChinaRRAM International Workshop took place at Soochow Universityfromthe June 12thto the June 13th of 2017, with the objective of becoming the major forum for discussion on resistive random access memories and related applications in China.The meeting, which was chaired by Prof. Mario Lanzaand had the support of Wiley-VCH, focused on discussing the status and prospects of resistive random access memory devices (RRAM) and related applications. The meeting consisted on 20 invited talks, 8 regular talks, and one poster session, and was attended by 62 experts from 11 countries including (Mainland China, USA, United Kingdom, Germany, Spain, Italy, Korea, Singapore, Hong Kong, Argentina, Taiwan, France). Most attendants came from academia (master/PhD students, postdocs and professors), and professionals/engineers from top companies like IBM, CEA-LETI and MD-Lab also attended.

Website: http://www.chinarram.org/register/